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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Silicon Transistor
VOLTAGE 15 Volts
APPLICATION
* Small Signal Amplifier .
CHEMX18PT
CURRENT 500 mAmpere
FEATURE
* Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA) * Low cob. Cob=7.5pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Two the 2SC5585 in one package. * NPN Silicon Transistor
0.9~1.1 0.15~0.3
(3) (4)
SOT-563
(1)
(5)
0.50 0.50
1.5~1.7
MARKING
*X8
1.1~1.3
0.5~0.6 0.09~0.18
6 4
CIRCUIT
1.5~1.7
1
3
Dimensions in millimeters
SOT-563
2SC5585 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Icp PC TSTG TJ Total power dissipation Storage temperature Junction temperature PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Output current CONDITIONS - - - - NOTE.1 NOTE.2 - - -55 - MIN. MAX. 15 12 6 500 1000 150 +150 150
O
UNIT V V V mA
mW C C
O
Note 1. Single pulse Pw=1ms 2. 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
2004-07
RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL PARAMETER CONDITIONS IC=1mA IC=10uA IE=10uA VCB=15V VEB=6V VCE=2V,IC=10mA IC=200mA,IB=10mA VCB=10V,IE=0mA,f=1MHZ VCE=2V,IE=-10mA,f=100MHZ MIN. 12 15 6 - - 270 - - - TYP. - - - - - - 90 7.5 320 - - - 100 100 680 250 - - MAX. V V V nA nA - mV pF MHz UNIT
BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency
Note 1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 Typical Electrical Characteristics
Fig.1 Ground emitter propagation characteristics
1000
Fig.2 DC current gain vs. collector current
1000 Ta=125 C 25 C
DC CURRENT GAIN : hFE
O O
COLLECTOR CURRENT : IC(mA)
VCE=2V pulsed
VCE=2V pulsed
-40 C 100
O
100
Ta=125 C
Ta=25 C
10
O
O
O
10
Ta=-40 C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR CURRENT : IC(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage vs. collector current ( I )
Ta=25 C pulsed
O
Fig.4 Collector-emitter saturation voltage vs. collector current ( II )
1000 IC/IB=20 pulsed
100
100 Ta=125 C O Ta=25 C O Ta=-40 C 10
O
Ta=125 C 10 Ta=25 C
O
O
Ta=-40 C 1 1 10 100 1000
O
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage vs. collector current
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.6 Gain bandwidth product vs. collector current
1000
TRANSITION FREQUENCY : fT(MHZ)
1000
IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C
VCE=2V O Ta=25 C pulsed
100
100
10
10
1 1 10 100 1000
1 1 10 100 1000
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
1000 IE=0A f=1MHZ O Ta=25 C
EMITTER INPUT CAPACITANCE : Cib (pF)
100 Cib 10 Cob
1 1 10 100 1000
COLLECTOR TO BASE VOLTAGE : VCB(V)

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